R Ishihara, Y Hiroshima, D Abe, BD van Dijk, PC van der Wilt, S Higashi, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker (2004), Single-grain Si TFTs with ECR-PECVD gate SiO2, In IEEE Transactions on Electron Devices Volume 51 p.500-502.

V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker (2004), Temperature dependent carrier transport in single-crystalline Si TFTs inside a location-controlled grain, G Ganguly, M Kondo, EA Schiff, R Carius, R Biswas (Eds.), In Symposium proceedings amorphous and nanocrystalline silicon science and technology p.1-6, Materials Research Society.

R Ishihara, PC van der Wilt, BD van Dijk, A Burtsev, JW Metselaar, CIM Beenakker (2003), Advanced excimer-laser crystallization process for single-crystalline thin film transistor, In Thin Solid Films Volume 427 p.77-85.

V Rana, R Ishihara, Y Hiroshima, D Abe, S Higashi, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker (2003), Dependence of single-crystalline Si TFT characteristics on the channel position in a location-controlled grain, In Proceedings of The 2003 international workshop on active-matrix liquid-crystal displays - TFT technologies and related materials p.17-20, Japan Society of Applied Physics.

R Ishihara, P Migliorato, F Yan, S Inoue, T Shimoda (2003), Dynamic behaviour of polycrystalline and single grain silicon TFTs, s.n. (Eds.), In Proceedings of The 10th International Display Workshops (IDW'03) p.327-330, IDW'03.

V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker (2003), High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by ¿-czochralski process, s.n. (Eds.), In SAFE 2003; Proceedings of sixth annual workshop on semiconductors advances for future electronics p.639-642, STW.

V Rana, R Ishihara, JW Metselaar, CIM Beenakker (2003), High performance TFTs fabricated inside a location-controlled grain by ¿-czochralski (grain-filter) process, s.n. (Eds.), In IMID'03; Third international meeting on information display p.237-240, s.n..

V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker (2003), High performance p-channel single-crystalline Si TFT fabricated inside a location-controlled grain by ¿-Czochralski process, In Proceedings of The 10th International Display Workshops (IDW'03) p.399-402, IDW'03.

A Burtsev, M Apel, R Ishihara, CIM Beenakker (2003), Phase-field modelling of excimer laser lateral crystallization of silicon thin films, In Thin Solid Films Volume 427 p.309-313.

R Ishihara (2003), Poly-Si TFT structures, Y Kuo (Eds.), In Thin film transistors; Materials and Processes; Volume 2: Polycrystalline silicon thin transistors p.1-30, Kluwer Academic Publishers.