R Ishihara, A Glazer, Y Raab, P Rusian, M Dorfan, B Lavi, I Leizerson, A Kishinevsky, Y van Andel, X Cao, JW Metselaar, CIM Beenakker, S Stolyarova, Y Nemirovsky (2006), A novel Selected Area Laser Assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors, In IEICE Transactions on Electronics Volume E89-C p.136-140.

W Fang, AJ van Genderen, R Ishihara, R Vikas, N Karaki, Y Hiroshima, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker (2006), Automated digital circuits design based on single-grain si TFTs fabricated through u-Czochralski (grain filter) process, s.n. (Eds.), In The 13th intl. workshop on Active-Matrix flatpanel displays and devices p.47-50, Japan Society of Applied Physics.

R Vikas, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker (2006), Capping layer on thin Si film for ¿-Czochralski process with excimer laser crystallization, In Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres Volume 45 p.4340-4343.

V Nadazdy, V Rana, R Ishihara, S Lanyi, R Durny, JW Metselaar, CIM Beenakker (2006), Defect states in excimer-laser crystallized single-grain TFTs studied with isothermal charge deep-level transient spectroscopy, HA Atwater, V Chu, S Wagner, K Yamamoto, HW Zan (Eds.), In 2006 Spring Meeting Symposium Proceedings, MRS Proceedings Volume 910 Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology ¿ 2006 p.-, s.l..

M He, R Ishihara, Y Hiroshima, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker (2006), Effects of capping layer on grain growth with ¿-Czochralski process during excimer laser crystallization, In Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres Volume 45 p.1-6.

F Yan, P Migliorato, R Ishihara (2006), Influence of trap states on dynamic properties of single grain silicon thin film transistors, In Applied Physics Letters Volume 88.

M He, R Ishihara, Y Hiroshima, S Inoue, T Shimoda (2006), Influences of the capping layer on the grain growth with micro-Czochralski process during excimer-laser crystallization, In Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres.

M He, R Ishihara, JW Metselaar, CIM Beenakker (2006), Preferred Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation, Y Kuo (Eds.), In ECS Transactions p.167-172, s.l..

M He, R Ishihara, CIM Beenakker (2006), Preferred surface and in-plane orientations in self-assembled poly-Si by multiple excimer-laser irradiation, Y Kuo (Eds.), In Electrochemical Society Transaction p.167-172, The Electrochemical Society.

M He, R Ishihara, EJJ Neihof, Y van Andel, H Schellevis, CIM Beenakker (2006), Preparation of large poly-Si grains by excimer laser crystallization of sputtered a-Si film with processing temperature of 100 °C, s.n. (Eds.), In Digest of Technical papers of AM-FPD 06 p.313-316, s.l..