A Burtsev, R Ishihara (2000), Energy density window for location-controlled Si grains by dual-beam excimer laser, JP Veen (Eds.), In SAFE-ProRISC-SeSens 2000: proceedings p.15-22, STW Technology Foundation.

A Burtsev, R Ishihara (2000), Enlargement of location controlled Si grains by dual beam eximer-laser with bump structures, In Applied Surface Science p.152-158.

R Ishihara, A Burstev, PFA Alkemade (2000), Location control of large Si grains by dual beam excimer-laser and thick oxide portion., In Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres Volume 39 p.3872-3878.

R Ishihara, A Burtsev, PFA Alkemade (2000), Location-control of large Si grains by dual-beam excimer-laser and thick oxide portion, In Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres Volume 39 p.3872-3878.

R Ishihara (2000), Process monitoring of excimer-laser crystallization of Si thin-films by electron backscattering pattern technique (EBSP), In Meeting handout p.1-6, s.n..

R Ishihara (2000), Temperature-gradient driven directional solidification of Si thin-film by excimer-laser melting, In AM-LCD 2000 digest of technical papers p.273-276, s.n..

R Ishihara (1999), Background and status of development of single-crystal thin film transistors (x-Si TFTs) [vertaald uit het Japans], In FPD Intelligence magazine Volume 5 p.1-5.

A Burtsev, R Ishihara (1999), Dual-beam excimer-laser induced Si grain size enlargement in an a-Si / structured SiO2 / metal stack, JP Veen (Eds.), In ProRISC99: proceedings. SAFE99: proceedings [CD-ROM] p.665-670, STW Technology Foundation.

BD van Dijk, GJ Bertens, R Ishihara (1999), Effects of gate oxide deposition methods on excimer laser crystallized poly-Si thin film transistors, In EuroDisplay '99: proceedings p.335-338, VDE.

PC van der Wilt, R Ishihara (1999), Grain matrix made with excimer-laser crystallization of thin silicon films, JH Werner, HP Strunk, HW Schock (Eds.), In Solid state phenomena. Vols. 67-68 p.169-174, Scitec.