R Ishihara, MP Glazer, Y Raab, P Rusian, M Dorfan, B Lavi, I Leizerson, A Kishnevsky, Y van Aandel, XQ Cao, JW Metselaar, CIM Beenakker, S Stolyarova, Y Nemirovsky (2005), A novel selected area laser assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors, H Mimura (Eds.), In IDW/AD '05 - Proceedings of the 12th international display workshops in conjunction with Asia display 2005 p.961-964, s.n..

V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker (2005), Capping layer on thin Si film for µ-Czochralski process with excimer laser crystallization, F Funada (Eds.), In Proceedings of the 12th international workshop on active-matrix liquid-crystal displays p.307-310, Japanese Society of Physics.

P Migliorato, F Yan, Y Mo, R Ishihara (2005), Comparison of static and dynamic characteristics of low temperature poly-Si and single grain TFTs, IW Wu (Eds.), In Proceedings of the international display manufacturing conferences 2005 p.1-6, SID, Taipei Chapter.

V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker (2005), Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain, In IEEE Transactions on Electron Devices Volume 52 p.2622-2628.

M He, R Ishihara, Y Hiroshima, S Inoue, T Shimoda, JW Metselaar, S Tsukamoto, CIM Beenakker, Y van Aandel (2005), Effects of crystallographic orientation of single-crystalline seed on ¿-Czochralski process in excimer-laser crystallization, H Mimura (Eds.), In IDW/AD '05 - Proceedings of the 12th international display workshops in conjunction with Asia display 2005 p.1-4, IDW/AD.

R Ishihara, M He, V Rana, Y Hiroshima, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker (2005), Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization, In Thin Solid Films Volume 487 p.97-101.

F Yan, P Migliorato, Y Hong, V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda (2005), Gate oxide induced switch-on undershoot current observed in thin-film transistors, In Applied Physics Letters Volume 86 p.1-3.

R Vikas, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker (2005), High performance single grain SI TFTs inside a location-controlled grain by µ-Czochralski process with capping-layer, s.n. (Eds.), In Proceedings of the 2005 International Electron Devices Meeting IEDM p.1-4, IEEE Society.

F Kimura, R Saito, S Tsukamoto, Y Hiroshima, M Dorfan, S Inoue, T Shimoda, R Ishihara, Y van Aandel (2005), Process simulation of laser crystallization and analysis of crystallization process of Si films, H Mimura (Eds.), In IDW/AD '05 - Proceedings of the 12th international display workshops in conjunction with Asia display 2005 p.977-980, IDW/AD.

P Migliorato, F Yan, V Rana, R Ishihara (2005), Switch-on undershoot current observed in thin film transistors, IW Wu (Eds.), In Proceedings of the international display manufacturing conferences 2005 p.1-6, SID, Taipei Chapter.