2019

Oscar Tenorio Pearl, Roel Mouris, Ryoichi Ishihara (2019). Diamond Colour Centers for Quantum Internet and Sensors. Maxwell-periodiek der electrotechnische vereeniging 22 26-29.

Myung Jae Lee, Pengfei Sun, Gregory Pandraud, Claudio Bruschini, Edoardo Charbon (2019). First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology. IEEE Journal of Selected Topics in Quantum Electronics 25 1-6.

2018

Ryoichi Ishihara, Miki Trifunovic, Paolo Sberna, T Shimoda (2018). (Invited) Printed Poly-Si TFTs on Paper for Beyond Plastic Electronics. ECS Transactions 86 47-55.

J.A. Alfaro, Paolo Sberna, Cinzia Silvestri, Max Mastrangeli, Ryoichi Ishihara, Lina Sarro (2018). Vacuum assisted liquified metal (VALM) TSV filling method with superconductive material. In 2018 IEEE Micro Electro Mechanical Systems, MEMS 2018, 547-550, IEEE.

2017

Miki Trifunovic, Paolo Sberna, T Shimoda, Ryoichi Ishihara (2017). Analysis of polydihydrosilane crystallization by excimer laser annealing. Thin Solid Films 638 73-80.

Lieven Vandersypen, H Bluhm, J. S. Clarke, A. S. Dzurak, Ryoichi Ishihara, A. Morello, D. J. Reilly, L. R. Schreiber, Menno Veldhorst (2017). Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent. NPJ Quantum Information 3 34.

Paolo Sberna, Miki Trifunovic, Ryoichi Ishihara (2017). Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes. ACS Sustainable Chemistry and Engineering 5 5642-5645.

Michiel van der Zwan, Ryoichi Ishihara, Miki Trifunovic (2017). Method of forming silicon on a substrate.

Miki Trifunovic, Paolo Sberna, T. Shimoda, Ryoichi Ishihara (2017). Polycrystalline Silicon TFTs on a Paper Substrate Using Solution-Processed Silicon. In Patrick Fay (Eds.) 2016 IEEE International Electron Devices Meeting, IEDM 2016, 1-4, IEEE.

Gennaro Gentile, Ryoichi Ishihara (2017). A 2.4 GHz to 27 MHz non-linear RFID topology in flexible electronics. In IET Conference Publications, 1-5, Institution of Engineering and Technology.