U Sonmez, R Quan, F Sebastiano, KAA Makinwa (2014), A 0.008-mm2 area-optimized thermal-diffusivity-based temperature sensor in 160-nm CMOS for SoC thermal monitoring, P Andreani, A Bevilacqua, G Meneghesso (Eds.), In Proceedings of the 40th European Solid-State Circuit Conference p.395-398, IEEE.

F Sebastiano, F Butti, R van Veldhoven, P Bruschi (2014), A 0.07mm2 2-channel instrumentation amplifier with 0.1% gain matching in 0.16¿m CMOS, LC Fujino, J Anderson, D Dunwell, V Gaudet, G Gulak, J Haslett, S Mirabbasi, K Pagiamtzis, KC Smith (Eds.), In Digest of technical papers - 2014 IEEE International Solid-State Circuits Conference p.294-295, IEEE.

F Sebastiano, L Breems, KAA Makinwa (2013), Mobility-based Time References for Wireless Sensor Networks, Springer.

Q Fan, F Sebastiano, JH Huijsing, KAA Makinwa (2011), A 1.8 µW 65 nV/sqrt (Hz) Capacitively-Coupled Chopper Instrumentation Amplifier in 65nm CMOS, In IEEE Journal of Solid State Circuits Volume 46 p.1534-1543.

F Sebastiano, S Drago, LJ Breems, D Leenaerts, B Nauta, KAA Makinwa (2011), A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks, In IEEE Journal of Solid State Circuits Volume 46 p.1544-1552.

F Sebastiano, S Drago, L Breems, D Leenaerts, B Nauta, KAA Makinwa (2011), Effects of packaging and process spread on a mobility-based frequency reference in 0.16-¿m CMOS, H Tenhunen, M Aberg (Eds.), In Proceedings 2011 European Solid-State Circuits Conference p.511-514, IEEE.

F Sebastiano (2011), Mobility-based time references for wireless sensor networks, PhD Thesis Delft University of Technology.

S Drago, MW Domine, D Leenaerts, B Nauta, F Sebastiano, LJ Breems, KAA Makinwa (2010), 2.4GHz 830pJ/bit duty cycled wake up receiver with -82dBm sensitivity for crystal less wireless sensor nodes, G Gulak, V Gaudet, J Haslett, S Mirabbasi, K Pagioamztis, KC Smith (Eds.), In IEEE Proceedings of ISSCC 2010 p.224-225, IEEE.

F Sebastiano, LJ Breems, KAA Makinwa, S Drago, MW Domine, D Leenaerts, B Nauta (2010), A 1.2V 10micro Watts NPN based temperature sensor in 65nm CMOS with an inaccuracy of +-0.2 degree C from -70 degree C to 125 degree C, In IEEE Journal of Solid State Circuits Volume 45 p.2591-2601.

F Sebastiano, LJ Breems, KAA Makinwa, S Drago, DMW Leenaerts, B Nauta (2010), A 1.2V 10µW NPN-based temperature sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from ¿70°C to 125°C, A Theuwissen et al (Eds.), In Digest of Technical Papers - 2010 IEEE International Solid-State Circuits Conference p.312-313, IEEE.